semiconductor group 4C1 package dimensions in inches (mm) characteristics (t a =25 c) symbol min. typ. max. unit condition emitter forward voltage v f 1.3 1.5 v i f =10 ma reverse current i r 0.1 100 m av r =6.0 v capacitance c o 25 pf v r =0 detector breakdown voltage collector-emitter bv ceo 70 v i c =100 m a emitter-collector bv eco 710 v i e =100 m a collector-emitter v ce =10 v, dark current i ceodark 550na i f =0 collector-emitter capacitance c ce 10 pf v ce =0 package dc current transfer ctr dc %i f =10 ma, v ce =5 v IL205AT 40 80 il206at 63 125 il207at 100 200 il208at 160 320 dc current transfer ctr dc %i f =1 ma, v ce =5 v IL205AT 13 25 il206at 22 40 il207at 34 60 il208at 56 95 collector-emitter i c =2.0 ma, saturation voltage v ce sat 0.4 i f =10 ma isolation test voltage v io 2500 vac rms equivalent dc isolation voltage 3535 vdc capacitance, input to output c io 0.5 pf resistance, input to output r io 100 g w switching time t on , t off 3.0 m si c =2 ma, r e =100 w, v ce =10 v specifications subject to change. tolerance: .005 (unless otherwise noted) features ? high current transfer ratio, i f =10ma, v ce =5 v IL205AT, 40 C 80% il206at, 63 C125% il207at, 100 C 200% il208at, 160 C 320% ? high bv ceo , 70 v ? isolation voltage, 2500 vac rms ? industry standard soic-8 surface mountable package ? standard lead spacing, .05" ? available in tape and reel (suffix t) (conforms to eia standard rs481a) ? compatible with dual wave, vapor phase and ir reflow soldering ? underwriters lab file #e52744 (code letter p) description the IL205AT/206at/207at/208at are optically coupled pairs with a gallium arsenide infrared led and a silicon npn phototransistor. signal information, including a dc level, can be transmitted by the device while maintaining a high degree of electrical isolation between input and output. the il205/6/7/8 come in a standard soic-8 small outline package for surface mounting which makes them ideally suited for high density applications with limited space. in addition to eliminating through-holes requirements, this package conforms to standards for surface mounted devices. a specified minimum and maximum ctr allows a narrow tolerance in the electrical design of the adjacent circuits. the high bv ceo of 70 volts gives a higher safety margin compared to the industry standard 30 volts. maximum ratings emitter peak reverse voltage ....................................... 6.0 v continuous forward current .......................... 60 ma power dissipation at 25 c ............................. 90 mw derate linearly from 25 c ....................... 1.2 mw/ c detector collector-emitter breakdown voltage ................ 70 v emitter-collector breakdown voltage .................. 7 v collector-base breakdown voltage ................... 70 v power dissipation ........................................ 150 mw derate linearly from 25 c ....................... 2.0 mw/ c package total package dissipation at 25 c ambient (led + detector) ...................................... 240 mw derate linearly from 25 c ....................... 3.3 mw/ c storage temperature ..................... C55 c to +150 c operating temperature ................. C55 c to +100 c soldering time at 260 c ............................... 10 sec. 40 .240 (6.10) .154 .005 (3.91 .13) .050 (1.27) typ. .016 (.41) .192 .005 (4.88 .13) .004 (.10) .008 (.20) lead coplanarity .0015 (.04) max. .015 .002 (.38 .05) .008 (.20) 7 .058 .005 (1.49 .13) .125 .005 (3.18 .13) pin one id .120 .005 (3.05 .13) c l .021 (.53) 5 max. r.010 (.25) max. .020 .004 (.15 .10) 2 plcs. 1 2 3 4 anode cathode nc nc 8 7 6 5 nc base collector emitter IL205AT/206at/207at/ 208at phototransistor small outline surface mount optocoupler 10.95
semiconductor group 4C2 .1 1 10 100 0.0 0.5 1.0 1.5 vce = 5 v vce = 0.4 v nctrce - normalized ctrce normalized to: vce = 10 v if = 10 ma ta = 25 c if - led current - ma figure 2. normalized non-saturated and saturated ctrce versus led current figure 1. forward voltage versus forward current 100 10 1 .1 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 if - forward current - ma vf - forward voltage - v ta = -55 c ta = 25 c ta = 85 c 1 10 100 1000 0.0 0.5 1.0 1.5 2.0 25 c 50 c 70 c ib - base current - m a nhfe(sat) - normalized saturated hfe normalized to: ib = 20 m a vce = 10 v ta = 25 c vce = 0.4 v figure 8. normalized saturated hfe versus base current and temperature figure 7. collector-emitter leakage current versus temperature 100 80 60 40 20 0 -20 10 10 10 10 10 10 10 10 -2 -1 0 1 2 3 4 5 ta - ambient temperature - c iceo - collector-emitter - na typical vce = 10v figure 3. collector-emitter current versus led current figure 4. normalized collector-base photocurrent versus led current figure 6. collector-base photocurrent versus led current figure 5. normalized collector-base photocurrent versus led current .1 1 10 100 0 50 100 150 vce = 0.4 v vce = 10 v if - led current - ma ice - collector-emitter current - ma ta = 25 c .1110100 .1 1 10 100 1000 if - led current - ma icb - collector-base current - m a ta = 25 c vcb = 9.3 v .1 1 10 100 .1 1 10 100 if - led current - ma nicb - normalized icb normalized to: vcb = 9.3 v if = 1 ma ta = 25 c .1 1 10 100 .01 .1 1 10 normalized to: vcb = 9.3 v if = 10 ma ta = 25 c if - led current - ma nicb - normalized icb
semiconductor group 4C3 figure 9. typical switching characteristics versus base resistance (saturated operation) figure 10. typical switching times versus load resistance 100 50 10 5 1.0 input: i f =10ma pulse width=100 ms duty cycle=50% base-emitter resistance, r be ( w ) t off t on switching time ( m s) 10k 50k 100k 500k 1m 1000 500 100 50 10 5 1 0.1 0.5 1 5 10 50 100 input: i f =10 ma pulse width=100 ms duty cycle=50% t off t on load resistance r l (k w ) switching time ( m s)
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